3,037 research outputs found

    Non-Leptonic B Decays into K-Resonances

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    We estimate the non-leptonic B decays B(ψ,ψ,χ1c)+KiB \rightarrow (\psi ,\psi^\prime , \chi_{1c})+K^i, where KiK^i are various K-meson resonances. We use the model of Isgur, Wise, Scora and Grinstein in the context of heavy quark effective theory, to calculate the hadronic matrix elements. Our estimates show that a substantial fraction of BXsψB \rightarrow X_s \psi results in higher resonances of K-meson and besides BK(K)ψB \rightarrow K(K^*) \psi, a considerable fraction of BXs(ccˉ)B \rightarrow X_s (c\bar c) goes to B(K,K)+(ψ,χ1c)B \rightarrow (K,K^*)+( \psi^{\prime},\chi_{1c}).Comment: 9 pages, late

    CLEO-c hot topics

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    Selected recent results and future prospects for the CLEO-c experiment at CESR are reviewed. The topics covered include measurements of leptonic and semileptonic charm decays made with data collected at the ψ(3770) resonance and results from a scan of the center-of-mass energy range from 3970 to 4260 MeV addressing the details of open-charm production and properties of the Y (4260) state observed last year by BaBar

    Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors

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    We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltage-tested devices did not degrade significantly as suggested by some papers in the literature. The same papers in the literature also suggest that high voltages cause cracks and pits. However, the high-voltage-tested devices in this study do not exhibit cracks or pits in TEM images, while the high-power-tested devices exhibit pits

    Synthesis and Characterization of Amorphous Hydrated Alkali Thio-Hydroxogermanates

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    The synthesis, structure, and nonhumidified proton conductivity of the hydrated alkali thio-hydroxogermanates, denoted as MxGeSx(OH)4-x·yH2O (1 ≤ x ≤ 4, 0 \u3c y \u3c 8) for M = Na, K, Rb, and Cs, are reported. These materials are generally X-ray amorphous when produced by a low-temperature (75 °C) aqueous solution evaporation−precipitation route. Raman and IR spectroscopies indicate mixed chalcogenide germanium central anions with distinct asymmetric Ge−O and symmetric Ge−S stretching modes observable around 820−754 and 500−325 cm-1, respectively. These thio-oxoanions possess a combination of thermally stable hydroxyl groups and hydrophilic alkali associated with the nonbridging sulfurs. Alternating current impendence measurements performed under anhydrous conditions on low-pressure sealed pellets reveal fast ionic conductivity, 10-3−10-2 S/cm, for typical temperatures between 100 and 275 °C. The observed falloff in conductivity at higher temperatures is consistent with the appearance of endothermic transitions in differential scanning calorimetry measurements of hermetically sealed samples, presumably from the “boiling” or sublimation of a crystalline water sublattice. Corresponding onset temperatures were observed between 150 and 275 °C and dependent on the alkali and composition. Under dry atmosphere conditions, thermogravimetric analysis mass loss measurements indicate continuous mass loss above the preparation temperature of 75 °C

    Analytical approximation for the sphere-sphere Coulomb potential

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    A simple analytical expression, which closely approximates the Coulomb potential between two uniformly charged spheres, is presented. This expression can be used in the optical potential semiclassical analyses which require that the interaction be analytic on and near the real r-axis.Comment: 4 pages including 3 figures and 1 tabl

    Crystal Structure of Thiogermanic Acid H4Ge4S10

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    X-ray diffraction analysis reveals the thiogermanic acid H4Ge4S10 possesses discrete adamantane-like Ge4S104- complex anions. Each thioanion is composed of four corner shared GeS2.5- tetrahedral units. Crystals were grown from anhydrous liquid hydrogen sulfide reactions with glassy germanium sulfide at room temperature. The crystal structure was solved and refined from single crystal diffractometer data (Mo Kα radiation) obtained at 173 K. H4Ge4S10 is triclinic, centrosymmetric space group P1̄, with a = 8.621(4) Å, b = 9.899(4) Å,c = 10.009(4) Å, α = 85.963(7)°, β = 64.714(7)°, γ = 89.501(8)°, and Z = 2. Average bridging and terminal d̄(Ge−S) distances are 2.229 and 2.206 Å, respectively. Vibrational mode assignments are reported from Raman scattering and IR absorption spectra of polycrystalline samples. The νs(Ge−S−Ge) and νs(Ge−S-) stretching modes are observed at 354 and 405 cm-1, respectively

    Synthesis and Characterization of the Thiogermanic Acids H4Ge4S10 and H2Ge4S9

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    The synthesis and structure of the thiogermanic acids H4Ge4S10 and H2Ge4S9 are reported. A novel preparation method consisting of reacting germanium oxide with liquid hydrogen sulfide containing a trace amount of water is used to form Ge4S104- ions. Evaporating the hydrogen sulfide solution at room temperature leaves an unstable H4Ge4S10·xH2O product. The stoichiometry and structure of the thermally stable anhydrous phase are dependent on reaction time. An H4Ge4S10 product with an adamantane-like cage structure is obtained at shorter reaction times. Longer reaction times produce an H2Ge4S9 product with a more complex cage unit, a higher symmetry unit cell, and increased thermal stability. Raman, infrared, powder X-ray diffraction, and thermogravimetric data are reported for both structures
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